The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We present lattice matched (LM) In0.53Ga0.47As MOSHEMT and pseudomorphic (PM) In0.75Ga0.25As MOSHEMT with gate-first process as well as their related post process annealing (PPA) effects in this paper. PM In0.75Ga0.25As MOSHEMT with 7nm In0.75Ga0.25As inserted channel promotes higher DC and RF performances due to higher electron mobility with higher indium content of the channel. MOSHEMT structure...
In this paper, multi-gate In0.47Ga0.53As MOSFETs with different numbers of fingers (4, 8 and 16) and different gate length were fabricated by using air-bridge technology. The devices were made by self-aligned method with gate deposition at first. For MOSFET with a gate length of 100nm, a maximum drain current of 120mA/mm, and a maximum transconductance of 75mS/mm were achieved at room temperature...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.