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The wraparound gate carbon nanotube field-effect transistor (CNTFET) has the advantage of more accurately controlled channel than the top-gate CNTFET. A 3-D simulation is performed using the finite-element method (FEM) to model the wraparound CNTFET with multi-CNT channels. Analytical expressions to model various capacitances of the same device are also derived from capacitances for the 1-D FET with...
The FinFET is considered to be one of the most promisingdevice structure to extend CMOS scaling into the nanometer regime. Quantum mechanical effects (QMEs) become significant for the Fin width is below 20 nm. However, this important issue has not been addressed [1] for transconductance modeling. Moreover, output transconductance depends on mobility. Mobility is temperature dependent. So, temperature...
A three-dimensional (3D) analytical model is derived in this paper to predict the temperature distribution in silicon carbide (SiC) MESFET. The analytical results are almost similar to the simulation results obtained by Atlas. The model describes the influence of the structural parameter and input power on temperature distribution. In some previous papers, analytical solution was obtained by the customary...
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