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Over 50% power conversion efficiency (PCE) has been reached in an oxide-free VCSEL. VCSELs with very small size (2 µm) have shown high single transverse mode selectivity and good lasing characteristics.
The influence of AlAs placed at various locations in oxide and non-oxide mode-confined VCSELs is studied. Experimental results show that removing oxide and introducing AlAs in various locations of the VCSEL DBRs can dramatically reduce the thermal resistance.
Vertical-cavity surface-emitting lasers (VCSELs) have achieved remarkable performance in threshold, speed, and efficiency. However the VCSELs have so far achieved their performance without the benefit of a buried-heterostructure (BH) gain structure. A high quality BH gain structure can be expected to dramatically improve VCSEL performance by eliminating parasitic charging effects in the perimeter...
Oxide-free lithographic vertical-cavity surface-emitting lasers (VCSELs) are characterized for their thermal properties. VCSELs with minimum threshold temperatures < 20 °C demonstrate lasing at heat sink temperatures ≥ 190 °C, with high rollover cavity temperatures.
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