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Data are presented on 901 nm lithographic vertical-cavity surface-emitting lasers (VCSELs) demonstrating high efficiency for small VCSEL sizes, and stable beam patterns. Power conversion efficiency >40% is obtained for VCSELs ranging in size from 6 to 2 µm diameter. The 2 µm diameter VCSELs produce output powers in excess of 6.5 mW, and produce single-lobed far-field radiation patterns over the...
Data are presented demonstrating, to our knowledge, the first monolithic chip integrating a semiconductor laser with a spontaneous light emitting diode optical pump that can also act as a heat pump. The light emitting diode operates in the voltage bias regime needed to generate a thermoelectrophotonic heat absorption. Under ideal operation the light emitting diode can efficiently optically pump the...
Data are presented demonstrating a low thermal resistance lithographic laser. An 8 μm vertical-cavity surface emitting laser defined using lithography and epitaxial crystal growth provides output power of 14 mW, slope efficiency of 0.88 W/A corresponding to differential quantum efficiency of 70% and power conversion efficiency of 26%. Low thermal resistance, even without heatsinking, results in high...
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