The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
An analytical model of parasitic capacitance in inserted-oxide FinFETs (iFinFETs) is proposed. A comparative study on the parasitic capacitance of contemporary multigate devices conforming to 7-nm technology node targets is presented. The proposed model is validated against 3-D Technology Computer-Aided Design (TCAD) simulations. Dependence of the iFinFET parasitic capacitance on device design parameters,...
We have shown here a comprehensive set of results on the coupling factor in a UTBB technology based on TCAD simulation. An interesting result is the degree to which the coupling factor is not constant across the possible realistic range of biases, and that not only back-gate depletion may play a role, but fixed charges and work function variation change the behavior. This suggests that these dependencies...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.