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HVVFET™, with its proven RF performances, such as high power gain, high peak power density and superior ruggedness, represents a major step forward in realizing compact high-power modules for ground-based and airborne radars. In this paper, the dependence of the HVVFET's RF performances on process-related parameters-including Si epilayer thickness and top-surface gold-bump thickness (Hbump) - is examined...
A novel short channel vertical RF MOSFET (termed HVVFET™) has been developed for avionics and L-band radar applications. The HVVFET employs a silicided polysilicon spacer that is formed along a vertical dielectric sidewall to serve as the gate. A second silicided poly layer is sandwiched between the gate interconnects and the Si wafer, thereby completely shielding the gate from the drain. Consequently,...
A comparative analysis of HWFET™ with two different drain dopings is presented, demonstrating the dominant role of the drain conductivity in determining the device's quasi-saturation (QS) behavior. Numerical simulation shows that the E-field in the drift region increases with the drain voltage. The lightly-doped-drain device is shown to exhibit a higher peak E-field and larger e- velocity than its...
We demonstrate that the electrical quality of junctions fabricated in lattice-mismatched In0.75Ga0.25As on InP grown by molecular beam epitaxy can be improved with the addition of in situ anneals in the buffer layer that separates the substrate from the In0.75Ga0.25As device layers. Near infrared photodetectors fabricated using this material had dark current densities of approximately 2.5 mA/cm2 at...
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