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We report on the operation of electrically pumped 1.3µm InAs QD laser directly grown on a Si substrate using InAlAs/GaAs dislocation filter layers with a threshold current density of 194A/cm2 and output power of ~80mW.
An InGaAs/InP single-photon avalanche photodiode (SPAD) with a high differential gain was achieved by changing the multiplication region thickness and the sheet charge density of the charge layer. A gain of more than 100 was obtained. The DCR is less than 1k with the frequency up to 250 kHz.
The spectral photoresponse and crosstalk characteristic for mid-wavelength InSb infrared focal plane arrays have been numerically studied. Effects of mesa depth, substrate thickness, pixel dimension and channel length on the photoresponse and crosstalk have been investigated. Our work shows that the spectral photoresponse and crosstalk are largely dependent on the geometric design of device.
We report on 2D numerical simulations of photoresponse characteristic for mid-wavelength InSb infrared photodiodes. Effects of thickness of absorption layer on the photoresponse have been investigated for both front-side and back-side illuminated devices. Optimal thickness of absorption layers for different diffusion lengths are extracted theoretically. An empirical formula is proposed to predict...
In this paper, the effects of the thickness of the multiplication region (Tm), the sheet charge density of the charge control layer (Dc) and the guard ring design to a separate absorption, grading, charge, and multiplication InGaAs/InP single photon avalanche diode (SPAD)'s performance are numerically discussed. Optimized Tm and Dc are designed for a SPAD. Implanted guard ring is revealed to be easier...
High quality InAlN/AlN/GaN heterostructure is grown by metal organic chemical deposition (MOCVD) on sapphire substrate. A high two-dimensional electron gas (2DEG) density of 2.5×1013 cm-2 was measured in this structure. To character the electric property of this heterostructure, a 1-μm-long gate InAlN/AlN/GaN high-electron mobility transistors (HEMTs) were fabricated. A maximum output current density...
High quality thin barrier InAlN/AlN/GaN heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). The metal-insulator-semiconductor (MIS) structure devices were fabricated with high dielectric constant material barium strontium titanate (BST). The gate leakage current is reduced more than one order of magnitude under 40 V reverse bias, by using the high dielectric constant material...
In this paper we report on the analysis of molecular beam epitaxy (MBE) grown GaAs and InGaAs capping bilayer QD laser material via a number of characterization techniques. The InGaAs capped bilayer QD lasers extends the room temperature lasing wavelength to 1.45μm. The further analysis of the materials using the multi-section technique allows the gain and absorption spectrum to be obtained under...
The authors have developed a W-band monolithic two-stage conductor-backed coplanar waveguide (CBCPW) low-noise amplifier using pseudomorphic AlGaAs/InGaAs/GaAs HEMT devices. The amplifier exhibits a noise figure of 4.2-4.8 dB with an associated gain of 12 dB from 92 to 96 GHz. The circuit was tested using a W-band on-wafer noise figure measurement system. The result is encouraging and shows promise...
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