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Using a dedicated test vehicle (low-k planar capacitor) for studying the intrinsic properties of low-k materials and using standard single damascene 50 and 90 nm ½pitch test vehicles, differences in reliability behavior between intrinsic and integrated SiOCH porous low-k materials were investigated. The studied parameters were leakage current, breakdown field, distributional shape of failure times...
The field and temperature dependence of the leakage current of low-k material is studied by using planar capacitors. First it is shown that our planar capacitors are suitable test vehicles to analyze the intrinsic properties of low-k materials. Then an evaluation of the trap density of the investigated low-k material is performed. Eventually different models such as Poole-Frenkel emission, Schottky...
In this paper, a novel hollow micro-disk mass sensor based on mode generation and degeneration principle is presented, which has the advantages of self-compensating environmental fluctuation and eliminating viscous damping as vacuum packaged. The device configuration, including the width of support beams, the channel height and the allocation of the sensing piezoresistors are carefully analyzed and...
The stress of Cu interconnects embedded in advanced ultra-low-k (ULK) dielectrics was studied for different porosities. Interconnects formed a high porosity material result in a lower stress due to relaxation in the plane. This effect is less significant for narrow lines, where in-plane relaxation is reduced by the dense narrow spacing. The stress in isolated lines was found to be independent of dielectric...
A novel test structure based on a planar capacitor design has been used for advanced barrier material evaluation and process optimization. This structure enables intrinsic reliability study of Cu/low-k interconnects. Various barrier materials such as CuMn self-forming barrier, ALD Ru, and PVD TaNTa on different dielectric films have been investigated to understand their intrinsic limits of barrier...
A novel test structure to study intrinsic reliability of barrier/low-k is proposed. The structure is based on a planar capacitor design where low-k film is deposited after the patterning of the capacitor, followed by metallization and Cu CMP. This so called low-k planar capacitor structure provides several unique capabilities to study various aspects of barrier/low-k TDDB compared with the conventional...
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