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Molybdenum disulfide (MoS2), a member of the transition metal dichalcogenide (TMD) family, is a 2D semiconductor with a direct bandgap of ∼1.8 eV for single layers. Its bandgap allows for high Ion/Ioff metal-oxide semiconducting field-effect transistors (FETs). Exfoliated monolayer MoS2 FETs exhibit current saturation with on-state current densities of 300 µA/µm, as well as transconductances exceeding...
It is known that breakdown strength of SF6 is extremely susceptible to non-uniform electric fields and metallic particle contamination, these effects lead to lower the breakdown voltage. Furthermore, from the view point of environmental protection, as SF6 has strong greenhouse effect, the use of SF6 will be strong controlled. Thus, it is needed to develop the alternative dielectric gas or gas mixtures...
Organic complementary inverters and ring oscillators are fabricated using a unique combination of inkjet printing and evaporation of organic semiconductors. p-Type poly (3, 3'''-didodecylquaterthiophene) (PQT) is inkjet printed, after which n-type copper hexadecafluorophthalocyanine (F16CuPc) is evaporated and patterned by shadow masking. A solution-processable bilayer gate dielectric with superior...
Simple ring-oscillator circuit has been used to estimate the degradation in circuit performance due to negative bias temperature instability (NBTI) effect but it fails to isolate the degradation from the NBTI for PMOS and the positive bias temperature instability (PBTI) for NMOS in high-K dielectric/metal gate CMOS technology. In this paper, we propose new circuit structures which monitor the NBTI...
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