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A problem, which concerns the effect of the diamond heat-spreading layer on the temperature and voltage-current characteristics of gallium nitride (GaN) high-electron-mobility transistors (HEMTs) is solved for the first time in a hydrodynamic model (which includes the continuity equation, Poisson equation, and equations for electron and lattice temperatures). The mechanism of the occurrence of peak...
Annealing of contact system Ti/Al/Ni/Au for the Ohmic contact formation to the AlGaN/GaN was performed. Method for determining the height of potential barrier in nonrectifying contact using voltage-capacitance characteristic was proposed. Temperature dependencies of the contact resistance for annealed Ti/Al/Ni/Au in temperature range 25÷175°C were obtained. Thermal field emission prevails in rectifying...
This paper presents the results of design and manufacture of low noise AlGaN/GaN HEMT for L-band. It has NFmin<1.4 dB gain>15 dB at F=1.5 GHz. GaN HEMT has been designed and manufactured in SRI "Pulsar"
In this paper, the results of design and manufacture of middle power X-band AlGaN/GaN HEMT are presented. It has Gain=11 dB, POUT =1.4 W/mm at F=10 GHz
Presented in this paper are the results of simulation, optimization and fabrication of GaAs coplanar MMIC of the p-i-n diodes power limiter with small signal insertion loss lower than 0.3 dB and power limit level less than 100 mW at the input power 1 W within the frequency band up to 18 GHz. The MMIC can be used in order to protect input low noise amplifiers, increasing receiver noise figure less...
Presented in this paper are the results of design and fabrication of coolable low noise amplifiers (LNA) for 8-mm band. LNA is based on GaAs MMICs. LNA presented has been fabricated for RT-22 FIAN receivers. It has the following parameters: DeltaF=34-38 GHz, TN<40 K, Gain=28 dB at T=23 K
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