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SiO2 and HfO2> gate dielectrics with TiN electrodes were subjected to an aggressive post-fabrication plasma exposure. A comparison of plate and comb antenna structures before and after exposure demonstrated that the plate antennae structures demonstrate evidence of plasma-induced damage while the comb structures did not. The physical origin of PD in SiO2 devices was found to be the amphoteric interface...
Positive constant voltage stress combined with charge pumping (CP) measurements was applied to study trap generation phenomena in SiO2 /HfO2/TiN stacks. Using the analysis for frequency-dependent CP data developed to address depth profiling of the electron traps, we have determined that the voltage stress-induced generation of the defects contributing to threshold voltage instability in high-k gate...
Electron trapping in high-k gate dielectrics under constant voltage stress is investigated. It is suggested that the electron trapping occurs through a two-step process: resonant tunneling of the injected electron into the pre-existing defects (fast trapping) and temperature-activated migration of trapped electrons to unoccupied traps (slow trapping). The proposed model successfully describes low...
Constant voltage stress (CVS) combined with charge pumping (CP) measurements was applied to study trap generation phenomena in SiO2 /HfO2/TiN stacks. Using the analysis for frequency-dependent CP data developed to address depth profiling of the electron traps, we have determined that the voltage stress-induced generation of the defects contributing to threshold voltage instability in high-k gate stacks...
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