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We report the formation and growth characteristics of an interfacial misfit (IMF) array between AlSb and Si and its application to III-Sb-based quantum-well broad-area edge-emitting laser diodes monolithically grown on an Si (001) substrate. A 13% lattice mismatch between AlSb and Si is accommodated by using the IMF array. A use of 5deg miscut Si substrates enables simultaneous IMF formation and suppression...
We report the device characteristics of type-II "W" stacked GaSb/GaAs QDs embedded in an InGaAs QW at room temperature (RT). The lasing at RT from 5 stacked GaSb QDs in InGaAs QWs is obtained at a wavelength of 1.026 mum with 2 mm cavity length. A large blueshift of the electroluminescence (EL) peak, which is typical of the type-II geometry, is observed by increasing the injection current...
Room-temperature photopumped lasing operation near 2.0mum is reported from III-Sb microcylinders grown monolithically on silicon. High quality epitaxy is enabled by an interfacial misfit array. Growth, fabrication and device characterization is discussed
We have used an AlGaAsSb metamorphic buffer layer to extend the emission wavelength of InAs quantum dots grown on GaAs. Ground-state photoluminescence at wavelengths >1.6/spl mu/m is observed along with first-excited state lasing at /spl lambda//spl sim/1.34 /spl mu/m.
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