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We report the formation and growth characteristics of an interfacial misfit (IMF) array between AlSb and Si and its application to III-Sb-based quantum-well broad-area edge-emitting laser diodes monolithically grown on an Si (001) substrate. A 13% lattice mismatch between AlSb and Si is accommodated by using the IMF array. A use of 5deg miscut Si substrates enables simultaneous IMF formation and suppression...
We demonstrate a monolithic, hybrid GaSb/GaAs diode emitting at 1.6 mum. The LED is comprised of a GaSb active region embedded within GaAs/AlGaAs DBRs using two interfacial misfit arrays. Growth, fabrication and characterization are discussed
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