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This paper describes the effects of water-related species contained in intermetal dielectric layers on the reliability of nonvolatile memory devices. Charge loss of the cells and hot-carrier (HC) lifetime degradation of peripheral N-channel MOSFETs due to the high temperature bake test are accelerated by the water-related species in the intermetal dielectric layer. The relation between the charge...
The authors present novel results concerning thin NO (nitride/oxide) double-layered interpoly dielectric in nonvolatile memories. Optimized NO films with thick top-oxide and thin nitride structure offer sufficient charge retention capability in the 10 nm effective oxide thickness region. However, this structure shows an anomalous threshold voltage increase due to the back tunneling of electrons which...
The key factors which dominate the leakage current in poly-oxide are reviewed, and intrinsic limitations in thinner poly-oxide to device application are investigated. The ON (oxide-nitride-oxide) structure that overcomes poly-oxide thinning limitations is described. This stacked film exhibits superior electric field strength due to the inherent electron trapping-assisted self-limiting process. UV...
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