# Search results for: Shan Yin

IET Power Electronics > 2017 > 10 > 10 > 1183 - 1189

IET Power Electronics > 2017 > 10 > 9 > 979 - 986

IET Power Electronics > 2017 > 10 > 10 > 1183 - 1189

The high switching speed in a silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) will aggravate the parasitic effects (di/dt and dv/dt) arising from the interaction with parasitic elements. In this project, a high-speed gate driver has been developed and optimised for the commercially available SiC MOSFET power module. The impact of various parasitic parameters on parasitic...

IET Power Electronics > 2017 > 10 > 9 > 979 - 986

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) is regarded as an attractive replacement for Si insulated gate bipolar transistor (IGBT) in high-power density applications due to its high switching speed and low switching loss. However, to fully utilise these benefits, the gate driver of the SiC MOSFET needs to be optimised to meet its special driving requirements...

The high power density converter is required due to the strict demands of volume and weight in more electric aircraft, which makes SiC extremely attractive for this application. In this work, a prototype of 50 kW SiC high power density converter with the topology of two-level three-phase voltage source inverter is demonstrated. A gate assisted circuit is further introduced to reduce the switching...

The high power density converter is required due to the strict demands of volume and weight in more electric aircraft, which makes SiC extremely attractive for this application. In this work, a prototype of 50 kW SiC high power density converter with the topology of two-level three-phase voltage source inverter is demonstrated. This converter is driven at high switching speed based on the optimization...

The power converter for more electric engine in aircraft requires high power density, which makes SiC extremely attractive for this application. In this work, a 50 kW SiC high power density converter with the topology of three-phase two-level voltage source inverter is developed. Meanwhile, an accurate mathematical model for the power loss and efficiency calculation is proposed, which is based on...

The reactive power in power converter with inductive load (motor drive e.g.) requires a current commutation path for the freewheeling current. Due to the high voltage drop of body diode of SiC MOSFET, a SiC Schottky diode is normally recommended as the anti-parallel freewheeling diode for SiC MOSFET to suppress the conduction of body diode. However, since the MOSFET can work as synchronous rectifier,...

The behavior-based electro-thermal models for commercial SiC Schottky diode and SiC MOSFET have been developed for circuit simulator PSpice over a wide range of temperature. The Foster RC network is used for thermal modeling and coupled with the electrical modeling by the interaction between power loss and junction temperature. Based on the measurement and parameters extracted from datasheet, both...