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The power converter for more electric engine in aircraft requires high power density, which makes SiC extremely attractive for this application. In this work, a 50 kW SiC high power density converter with the topology of three-phase two-level voltage source inverter is developed. Meanwhile, an accurate mathematical model for the power loss and efficiency calculation is proposed, which is based on...
The high switching frequency (> 20 kHz) of SiC MOSFET module makes it as an attractive alternative of Si IGBT module for high power density applications. Since SiC MOSFET and Si IGBT have the similar MOS-gated structure, it is normally regarded that the gate driver of SiC MOSFET can directly inherit from that of Si IGBT. However, considering the different device physics properties, some special...
Traditional IGBT turn-on loss evaluation methods are curve fitting of double pulse test data without insight of IGBT turn-on process. This paper proposed an analytical evaluation method of IGBT turn-on loss. In the proposed method, a qualitative IGBT switching waveform and an IGBT switching trajectory in output characteristics are used to analyze IGBT turn-on process. The detailed expressions for...
The reactive power in power converter with inductive load (motor drive e.g.) requires a current commutation path for the freewheeling current. Due to the high voltage drop of body diode of SiC MOSFET, a SiC Schottky diode is normally recommended as the anti-parallel freewheeling diode for SiC MOSFET to suppress the conduction of body diode. However, since the MOSFET can work as synchronous rectifier,...
To drive SiC power module with high-speed switching, the stray inductance becomes a key factor in converter design. In this work, the stray inductances of module and peripheral circuits are investigated by simulation and measurement. With the loop stray inductance of 29.2 nH, the module is tested up to 800 V and 50 A with insignificant EMI issues of ringing and overshoot. And the dv/dt ratios at turn-off...
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