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Epitaxially grown In1−xGaxAs is integrated for the first time as replacement of polycrystalline silicon (Si) channel down to 45 nm diameter for 3-D NAND memory application. Channels with different compositions are obtained after careful surface preparation by tuning growth conditions such as: temperature, choice of precursors and flow ratio. In1−xGaxAs shows superior conduction properties than poly-Si...
InGaAs FinFETs fabricated by an unique Si fin replacement process have been demonstrated on 300mm Si substrates. The devices are integrated by process modules developed for a Si-IIIV hybrid 300mm R&D pilot line, compatible for future CMOS high-volume manufacturing. First devices with a SS of 190 mV/dec and extrinsic gm of 558 µS/µm are achieved for an EOT of 1.9nm, Lg of 50nm and fin width of...
Device concepts of quantum well, dot, and ring for multi-band photodetection are presented in this paper. Results on a preliminary GaAs-based npn-Quantum Well Infrared Photodetector (QWIP) show two combinations of wavelength bands which can be selected using the applied bias. An InP based npn-QWIP structure is proposed to eliminate the cross talk between the bands. As a separate approach, a three...
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