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GaN microneedle crystals are grown via GaAs substrates decomposition, using ultrahigh‐pure anhydrous ammonia as nitrogen precursor at 900 °C for 4 min. The X‐ray diffraction pattern shows the possible cubic and hexagonal coexistence of phases for the GaN highest intensity peak. Scanning electron microscopy presents a seaflower‐type growth for GaN microneedles, which can be related to factors such...
Optical and structural study of undoped GaN powders obtained by nitridation of metallic gallium and pyrolysis of Ga(NO3)3-CH6N4O polymer were made. A high synthesis efficiency for the nitridation of metallic gallium was observed, while the pyrolysis synthesis of the Ga(NO3)3-CH6N4O polymer was very low. The XRD patterns showed an intense peak in the orientation (101) of the hexagonal GaN in both cases...
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