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Helium-3 ion irradiation technique is proposed to improve silicon substrate noise isolation by creating a local semi-insulated region with a resistivity over 1kΩ-cm in low-resistive silicon substrate. Noise isolation is improved about 10dB at 2GHz after helium-3 ion irradiation in a 180-nm CMOS process. A 90% noise reduction has been achieved in the measurement results for test structures with guard...
A helium-3 ion bombardment technique is proposed to realize high-$Q$ inductors by creating locally semi-insulating substrate areas. A dose of $1.0\times 10^{13}$ cm$^{-2}$ helium-3 increases a Si substrate resistivity from 4 $\Omega \cdot $ cm to above 1 $\text{k}\Omega \cdot $ cm, which improves the quality factor of a 2-nH inductor with a 140-$\mu \text{m}$ diameter by 38% ($Q=16.3$ ...
A novel helium-3 ion bombardment technique is proposed for creating locally semi-insulating substrate areas. A helium-3 dose of only 1.5×1013cm−2 increases a Si substrate resistivity from 6Ω-cm to 1.5kΩ-cm, which improves the quality factor of a 2-nH inductor with a 140µm-diameter by 38% (Q=16.3). An aluminum mask is used for covering active areas, and at most 15-µm distance from the mask edge is...
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