The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Present status of membrane BH-DFB lasers toward on-chip optical interconnection in next generation LSI will be presented. Current injection type DFB lasers were realized by a direct bonding process on an SOI substrate and also realized by adopting a lateral current injection structure grown on a semi-insulating InP substrate.
With aiming at realization of extremely low power consumption active devices for optical interconnections and photonic integrated circuits (PICs), we have been exploring GaInAsP/InP long wavelength lasers consisting of high index-contrast gratings by low-damage fabrication processes. Moreover, active photonic devices based on high index-contrast waveguides, so called dasiaSemiconductor Membrane Lasers,psila...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.