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As-grown n-4H-SiC/SiO2 capacitors exhibit anomalous capacitance-vs.-voltage (C–V) characteristics at low temperatures. Abrupt minima appear in the C–V curves at specific values of the gate voltages independent of the sample temperature, strongly suggesting the presence of resonant electron tunneling. We put forward a qualitative model where neutral donor states present at the SiC/SiO2 interface enable...
The attempt to integrate two electron transport mechanisms, by computing the field emission (FE) current as a superposition of both resonant and sequential branches, is reported. A quantum object through which the tunnelling occurs is modelled as a one-dimensional (1D) potential well separated from the substrate by a potential barrier. Results show that the proposed model is useful in the interpretation...
Computational 3D simulations of individual carbon nanotubes (CNTs) and vertically aligned arrays of CNTs were conducted in order to gain insight into their field emission characteristics. We find that the widely used approximation that the enhancement factor is equal to the aspect ratio of the emitter to be an over-estimation, and that the enhancement factor is only loosely related to the aspect ratio,...
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