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The degradation of p-n-p silicon BJTs under dynamic high-current stress has been studied. The BJTs were biased in the forward active mode with collector open or shorted to the base, and in the inverse active mode with emitter open or shorted to the base, the bias voltages were varied. During stress, the phenomena of reduction and recovery in base current have been found. When the BJT was biased...
A new analytic MOSFET current model in the linear region is developed by using the pseudo-two-dimensional approximation. The model physically accounts for the threshold voltage reduction with decreasing channel length. In the model a set of device parameters can be used for devices with different channel lengths. The model has been applied to study the current of lightly doped drain (LDD) MOSFETs...