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Room temperature growth of HfO2 thin film on clean 2H-MoS2 via plasma-sputtering of Hf-metal target in an argon/oxygen environment was studied in-situ using x-ray photoelectron spectroscopy (XPS). The deposited film was observed to grow akin to a layer-by-layer growth mode. At the onset of growth, a mixture of sulfate- and sulfite-like species (SOx2− where x=3, 4), and molybdenum trioxide (MoO3),...
Evidence for the influence of Si(001)-(2×1) surface reconstruction on the elongation direction of CoSi2 flat islands is discussed in this paper. Step height analysis of these flat islands shows that flat island heights, HA, follow discrete values of NA such that HA=mNA+c, where NA=1, 2, 3, …, m is equivalent to the number of monoatomic step height (1.4Å) of the Si(001) surface, and c is the initial...
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