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Titanium nitride (TiN) and titanium (Ti) were deposited using a low-pressure and high-density helicon plasma process with titanium tetrachloride (TiCl 4 ). This study aimed to clarify the characteristics of the TiN and Ti deposition processes and the properties of films. The rate-determining process of the TiN film-deposition reaction was changed with the TiCl 4 partial pressure. High-deposition...