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Microstructural defects (MSDs) in graphene are a primary negative factor for the crystal quality and electrical properties of graphene and there is little knowledge about their formation. Here we report the formation mechanism of MSDs in graphene domains during the CVD growth on Cu substrate. Hydrogen-etching results show that an etched graphene hole corresponds to the position of a MSD that appears...
The N-doped graphene domain is synthesized through co-growth of ammonia and methane by chemical vapor deposition (CVD). Results showed that the nitrogen concentration, defect density, and doping level increased with the decrease in growth temperature. Notably, the position of N1s main peak from X-ray photoelectron spectroscopy (XPS) showed a significant linear blueshift as the temperature decreased,...
We report the synthesis of large-area graphene films on Mo foils by chemical vapor deposition. X-ray diffraction indicates that the dissolution and segregation process governs the growth of graphene on Mo foils. Among all processing parameters investigated, the cooling rate is the key one to precisely control the thickness of graphene film. By optimizing the cooling rate between 1.5 and 10°C/s, we...
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