The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A transformerless multicellular dc-dc converter has been newly proposed. The capacitively isolated dc-dc cell converters have been applied to develop the multicellular converter without using high frequency transformers. The high voltage transformation ratio is achieved by the ISOP (Input Series Output Parallel) connection topology of the cell converters and the realization of the highly efficient...
An active gate controlled power transfer switch using SiC-MOSFET is proposed to achieve the fault tolerant operation of ISOP (Input Series and Output parallel) multicellular dc-dc converter. The SiC-MOSFET with high temperature capability simplifies the configuration of the protection circuit, and the control of its on-resistance by the active gate control realizes the smooth protection without the...
A multicellular ac-dc converter is proposed to realize highly efficient dc distribution system in data centers. The proposed converter consists of the singe-phase full-bridge ac-dc cell converters using ultralow loss GaN (Gallium Nitride) transistors and the non-regulated highly efficient isolated dc-dc cell converters. These cell converters are connected in ISOP (Input Series and Output Parallel)-IPOS...
A new approach has been proposed for creating higher power density 200Vac / 380Vdc converters to be installed in 380 V DC distribution systems. This approach requires a high density 3-Phase PWM converter. A SiC-JFETs and SiC-SBDs pair is attractive because of its low conduction loss created by a synchronous rectification and low switching loss by using uni-polar power devices. A design has already...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.