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Electroluminescence (EL) from a forward biased Ni/Au‐AlGaN/GaN Schottky diode was observed and studied in this work. The turn‐on voltage of the EL was found to be coinciding with the second turn‐on voltage in the current‐voltage characteristics. Similarity between EL and photoluminescence spectra suggests that the holes are injected into the GaN layer when the applied bias is higher than the second...
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