The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
AlN/GaN heterostructures with AlN thin film growing by low‐thermal‐budget (300 °C) plasma‐enhanced atomic layer deposition (ALD) were realized on a semi‐insulating GaN‐on‐sapphire template. By applying in situ ALD‐grown Al2O3 as the gate dielectric, thin film transistors (TFTs) have been successfully fabricated. The proposed TFTs exhibit effective gate control with a low subthreshold swing of ∼ 85...
AlN/GaN heterostructures were realized by growing AlN thin film with low-thermal-budget (300) plasma-enhanced atomic layer deposition (ALD) on a semi-insulating GaN-on-sapphire template. Thin-film transistors (TFTs) have been successfully fabricated using in situ ALD-grown as the gate dielectric. The proposed TFTs exhibit good gate control with a low subthreshold...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.