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A solid-state memory effect is defined as the ability of a material to store information, and it requires at least two switchable memory states that can be addressed by an externally controlled parameter. In this article we present experimental evidence of a memory effect in anti-ferroelectric Pb0.99Nb0.02[(Zr0.57Sn0.43)0.94Ti0.06]0.98O3 polycrystalline ceramic materials. This study indicates that...
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