The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this work we focus on P doping of Si nanocrystals (NCs) embedded in a SiO2 matrix. We prove that, at equilibrium, high P concentrations within the Si NCs are thermodynamically favoured. We experimentally estimate the energy barriers for P diffusion in SiO2 and trapping/de-trapping at the SiO2/Si NCs interface, obtaining a complete picture of the system at equilibrium.
The strain induced by substitutional arsenic into the silicon lattice was investigated experimentally. First, a combination of multiple implantations was used to obtain a flat arsenic profile in the first 150 nm of the substrate. Although a full activation of the dopants could be achieved, the EOR defects resulting from the implants were not dissolved and prevented reliable strain measurements. A...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.