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Memory unit, especially the non-volatile memory (NVM), is an indispensable component in a high performance electronic systems which aims at efficient information processing and storage. Resistive random access memory (RRAM) is one of the most promising candidates among the emerging memory technologies. However, optimization of the variability introduced by the intrinsic stochastic nature of filament...
In this work, a novel deep-impurity-level assisted tunneling technology with enhanced band to band tunneling (BTBT) probability is proposed and experimentally demonstrated. Through implanting deep level impurities in the tunnel junction, continuous deep level states can be introduced to facilitate the BTBT process for significant BTBT probability boosting. Compared with conventional tunnel diodes,...
In nanoscale MOSFETs with narrower width, the random telegraph noise (RTN) is conspicuous during the device aging caused by negative bias temperature instability (NBTI), which leads to difficulty for accurate assessment of end-of-life variability. Based on fast voltage stepping stress (FVSS) technique to predict the long-term degradation, an improved extraction method is proposed for eliminating the...
In this paper, a source/drain design for vertical channel nanowire FETs involving extension doping profile, spacer dielectric constant and spacer width is proposed and demonstrated by TCAD simulation. The results show that asymmetric graded lightly doped drain (AGLDD) exhibits excellent SCE controllability and driving capability even with relatively large nanowire diameter. By adopting high-k spacer...
Inspired by the computing architecture of human brain, neuromorphic computing promises massively parallel, energy efficient and fault tolerant computation compared with conventional von Neumann approaches. In order to achieve this ambitious goal, one of the crucial tasks is to make devices that can emulate the functions of biological synapses at the physical level. Here we fabricated a novel Pt/TaOx/Ta...
In this paper, nanoscale germanium (Ge) fin etching with inductively coupled plasma (ICP) equipment by Cl2/BCl3/Ar gas is experimentally demonstrated. The impact of Cl2/BCl3/Ar gas ratio on etching induced Ge surface roughness, etch rate, sidewall steepness, uniformity and layout dependence are comprehensively investigated. The surface roughness is improved by increasing Ar flow rate. A nearly vertical...
On behalf of the Conference Committee, we would like to welcome you to the 2016 International Conference on Solid-State and Integrated-Circuit Technology (ICSICT). The 13th in its series, ICSICT 2016 goes to the beautiful city - Hangzhou for four days from Oct. 25th to 28th, along with the 30th anniversary celebration of ICSICT.
Density functional theory (DFT) calculations are performed to investigate the hydrogen-related oxygen vacancy defects in HfO2 gate dielectrics. The results demonstrate that the introduction of the hydrogen atom has less effect on micro-structure of the HfO2 oxygen vacancy defects. And the new hydrogen-related defects have good thermal stability. The stability of different hydrogen-related structures,...
In this paper, a new steep-slope device concept of resistive-gate field-effect transistor (RG-FET), which is operated by electrically induced abrupt resistance change of gate stacks, is discussed in detail and experimentally optimized. The fabricated RG-FET demonstrates both an ultra-steep subthreshold slope of below 5mV/dec over almost 2 decades of drain current and a high on-current competitive...
In this paper, the radiation response of 90nm bulk Si MOS devices irradiated by heavy ions is experimentally studied. Due to the intrinsic random incident of heavy ions, different performance degradation is observed, such as threshold voltage shift, saturation current change and maximum transconductance degradation. These performance degradations may be attributed to the displacement damage in channel...
The frequency dependence of oxide trap coupling effect in nanoscale MOSFETs under AC switching condition is discussed thoroughly, with experimental and theoretical studies. By using AC STR measurement, a decreased tendency of trap coupling strength with increased frequency is observed. Rather than conventional 2-state trap model, it is found that only the explanation based on complete 4-state trap...
The 2-D limited regrowth of α-Si is proposed to achieve larger grain size and smoother surface simultaneously with conventional rapid thermal annealing process. Transmission line method is carried at room temperature and 100K temperature separately to confirm that the boundary scattering and ionization scattering are possibly suppressed by the capping layer method due to less grain boundary and trapped...
In this paper, the widely adopted “hole in the inversion layer” (HIL) model for predicting the amplitude of random telegraph noise (RTN) in nanoscale MOSFETs, is theoretically revisited with focusing on its scaling limit and validation range. It is found that this simple physical model fail to apply on ultra-scaled devices with L<20nm and/or W<10nm, due to the non-negligible impact from source/drain...
Particle swarm optimization (PSO) has been proven to be a simple yet effective algorithm for searching the optimal solutions of objective functions. The main advantage of PSO is its simplicity, but it easily gets stuck in local optima. In order to remain the original merit and raise its performance, a novel idea is proposed in this paper, which selects the best model of PSO based on the previous performance...
The characteristics of diurnal rainfall in the East Asian continent consist of a propagating regime over the Yangtze River and a non-propagating regime in southeast China. Simulations of these two diurnal rainfall regimes by 18 CMIP5 models were evaluated from the historical experiment of 1981–2005. The evaluation led to the identification of one model, the CMCC-CM that replicated the key characteristics...
Traditional paper-based teaching activities are restricted by physical space. Therefore, one cannot integrate and collaborate with the design of the instructional materials effectively. As a result, it is unlikely that instructors are able to successfully moderate learners' focus on the content, as well as the order of their focus during their reading and learning processes, which forms a blind spot...
A novel design of 2 × 2 NbN hot electron bolometer (HEB) mixer array receiver has been demonstrated here by using the multiple local oscillator (LO) beams obtained from a power distributor. In our design, the 1.5 THz LO beam is split into four uniform sub-beams with a spacing of 18 mm, then arrives at a four-pixel silicon lens with twin slot antenna (TSA) through a large-area beam splitter. An additional...
A simple device-level characterization approach to quantitatively evaluate the impacts of different random variation sources in FinFETs is proposed. The impacts of random dopant fluctuation are negligible for FinFETs with lightly doped channel, leaving metal gate granularity and line-edge roughness as the two major random variation sources. The variations of $V_{\rm {th}}$ induced by these two major...
The sensorless field oriented technique has a very broad application and is often applied to motor drive control systems to enhance the operating accuracy and efficiency. However, this technology needs to design a set of estimator which can estimate actual values of the stator resistance, the rotor resistance and the rotor speed to prevent the occurrence of the unstable drive system caused by matching...
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