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By realizing a high-quality epitaxial La2O3/ GaAs(111)A interface, we demonstrate GaAs CMOS devices and integrated circuits including nMOSFETs, pMOSFETs, CMOS inverters, NAND and NOR logic gates and five-stage ring oscillators for the first time. As an exercise of III–V CMOS circuits on a common substrate with a common gate dielectric, it provides a route to realize ultimate high-mobility CMOS on...
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