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We demonstrated the operation of GaN-on-Si metal–oxide–semiconductor field effect transistors (MOSFETs) for power electronics components. The interface states at SiO 2 /GaN were successfully improved by annealing at 800°C for 30min in N 2 ambient. The interface state density was less than 1×10 11 cm –2 eV −1 at E c −0.4eV. The n + contact layers...
In this paper, we have studied the effect of systematic downscaling of MOS channel length of the performance of the hybrid GaN MOS-HEMT with numerical simulations. The improvement in on-state conduction, together with concomitant short channel effects, including drain induced barrier lowering (DIBL) is quantitatively evaluated. A specific on-resistance of 2.1mΩcm 2 has been projected for a...
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