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The results of High Nitrogen Pressure Solution (HNPS) growth of GaN in multi feed‐seed (MFS) configuration are presented. The idea of this configuration is based on the conversion of the free standing HVPE‐GaN crystals (seeds) to the free standing HNPS‐GaN of much higher quality than the seeds. A new arrangement of the seeds in the MFS configuration is shown. The influence of the experimental conditions...
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