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Experimental studies of diffusion of oxygen in bulk wurtzite-type GaN crystals grown by Halide Vapor Phase Epitaxy (HVPE) are reported. Oxygen concentration profiles were studied in as-grown GaN crystals and also after annealing of crystals at temperatures up to 3400K and pressures up to 9GPa. Investigated crystals contained large conical defects i.e. pinholes of significantly higher oxygen concentration...
Crystallization of GaN by High Nitrogen Pressure Solution method in multi-feed–seed (MFS) configuration without intentional doping [1] results in: (1) Growth of strongly n-type crystals with free electron concentration increasing with growth temperature in ranges of 2–6×10 19 cm −3 and 1350–1430°C, (2) stable growth on Ga-polar surface and unstable growth on N-polar surface, crystals...
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