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Crystallization of GaN by the HVPE technique on an MOCVD-GaN/sapphire template with photo-lithographically patterned Ti mask and ammonothermally-grown GaN crystals (Am-GaN) was studied and compared. Structural and optical properties of the obtained free-standing HVPE-GaN revealed that Am-GaN seeds produced material of much higher quality in terms of etch pit density (EPD), X-ray rocking curves, and...
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