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We report on Terahertz wireless communications and fast imaging experiments at 300 GHz, using nanometer-sized transistors as detectors. The physical mechanism of the detection is related to the overdamped plasma waves in the transistor channel.
We demonstrate two different Terahertz (THz) rectification mechanisms by graphene field effect transistors: 1) a standard rectification mechanism where THz radiation modulates simultaneously the carrier density and the carrier velocity, and 2) a mesoscopic rectification due to the existence of the nonlinearity associated to the quantum interference effects.
Development of new terahertz (THz) direct sensors based on the oscillation of the plasma waves in the channel of sub-micron FETs is increasing in interest due to its great potential in imaging and spectroscopy. FETs based in the heterosystem Si/SiGe is wafer-compatible with mainstream CMOS closely follow both noise and gain performances of III-V families in microwave applications; the high-values...
GaAs field effect-transistors are used for single-pixel imaging using frequencies above 1 THz at 300 K. Images obtained in transmission mode at 1.63 THz are recorded with spatial resolution of 300 μm. We demonstrate that, with applied drain to source current, the imaging at up to 2.5 THz is possible.
We report on the observation of photocurrents in GaAs High Electron Mobility and Si Field Effect Transistors. We show that illuminating the samples with high power terahertz laser radiation causes electric currents. These currents are driven by plasmonic effects in two dimensional electron gases.
We present recent results on detection of terahertz radiation with nanometer size GaAs FETs and Si MOSFETs at room temperature. We demonstrate that the detection sensitivity and speed allows application of the transistors in terahertz imaging systems. At low temperatures the transistors can act as magnetic field tunable detectors.
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