We present fluorinated ZnO (F-ZnO) TFT to overcome the native drawback of pure ZnO TFT. At a optimum F concentration of ∼1020/cm3, it exhibits high field-effect mobility of ∼71cm2/Vs, low sub-threshold slope (SS) of 0.18V/decade, high reliability, good uniformity and light insensitivity, The improvement is attributed to the passivation effect of F. Based on the high performance F-ZnO TFTs, a novel...
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