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Ferroelectric field effect transistors (FeFETs) using individual GaN nanowire as the conducting channel and Pb(Zr0.52Ti0.48)O3 (PZT) thin film as the gate dielectric were fabricated, and their electrical properties were investigated. The curves of the transfer characteristics for the individual GaN nanowire‐based FeFET are of counterclockwise hysteresis loops, as the gate voltage was swept from negative...
This paper presents the study using X-ray photoemission electron microscopy (XPEEM) of a simple and well defined single-layer necked Permalloy nanowire, which provides an artificial pinning site for domain wall. The XPEEM images provide direct evidence of the formation of the head-to-head or tail-to-tail domain wall by controlling the magnetization process.
Logic gates are important as they are indispensable devices to all the electronic products. Controlling magnetization directly with an electric current rather than a magnetic field is one of the recent developments within spintronics. The magnetic logic operations are performed by domain wall propagation through ferromagnetic nanowire junctions, resulting in magnetization reversal. This domain wall...
The potential for magnetic domain walls (DWs) within Permalloy nanowires to be used as non-volatile data storage has prompted a surge in research to meet the fabrication and operational challenges of these DW devices. Utilising a spin polarised current, it has been proposed that transporting vortex DWs is preferential over transverse DWs to accommodate lower currents. It is also believed that pinning...
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