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An on-wafer and self-calibrated scheme is proposed and demonstrated for self-referenced microwave characterization of a silicon integrated optical transceiver. The proposed self-calibration method enables on-wafer selective extraction of microwave characteristic parameters of high-speed modulators and photodiodes in the integrated optical transceiver, without the need for extra electrical-to-optical...
We report the measurement of the intensity-dependent refractive index m of ZnSe crystal at THz frequencies. We used a modified Z-scan method with an intense THz beam of maximum intensity 0.8×109W/cm2. We measured an extremely large m value of the order of 10−11 cm2/W, which is significantly larger than the m value of ZnSe in the near infrared.
Robust on-chip ESD protection without RF performance degradation is a challenge in RF IC designs. This paper reviews a new co-design technique for ultra wideband (UWB) RF ICs and ESD protection so as to achieve whole-chip design optimization.
Explicit expressions describing the gate width dependences of HEMTs noise parameters have been obtained experimentally. The minimum noise figure and optimum source admittance are proportional to gate width, and noise resistance is inversely proportional to gate width. A scalable noise model is then developed, which accurately predicates noise parameters in a broad gate width range. The scalable noise...
Fresnel lenses have a number of attractive properties for pulsed terahertz imaging. We demonstrate tomographic imaging with a Fresnel lens and report progress towards the goal of long range terahertz imaging.
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