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32 nm Si and Si1-xGex SOI Coplanar N Channel Vertical Dual Carrier Field Effect Transistors for mixed signal and communication applications are presented.
With the announcement of Intel and IBM to provide 45 nm CPUs, the semiconductor industry has been engaged in the research and development work of 32 nm node CMOS technology. In this paper, we present our development work on the design theory and fabrication process integration of 32 nm node Ge, Si and Si1-xGex "vertical dual carrier field effect transistor" (VDCFET) ASIC for switching and...
Tensile-strained Ge photodetector is realized on Si-substrate using novel SiSiGe compliant layer with two-step Ge-process. Monolithic integration of p-i-n detectors with low dark current (0.4 nA), responsivity (190 mA/W) and high speed (5 GHz) on Ge-CMOS platform is demonstrated, with Ge pMOSFET showing 2X Si hole mobility.
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