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In this work, representative high-k/metal gate MOS-capacitor stacks were fabricated in both gate first and replacement gate integration schemes. Aluminum- and lanthanum- based cap layers (both widely accepted as Vt tuning cap layers in the industry), in addition to TiN metal gate, can tune the effective workfunction towards PMOS and NMOS, respectively. Varying Ti:N stoichiometry in TiN can induce...
In the present work, a method for fabrication of Ti 3 AlC 2 by combustion synthesis was developed. Low cost titanium, aluminum and carbon powders were used as raw materials. The effects of the initial ratio among the above-mentioned materials on the combustion behavior and phase formations in the final products were investigated. The experimental results showed that the combustion...
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