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Fan-out wafer-level-packaging (FO-WLP) technology is developed with the advantages of smaller package size, higher Input/Output (I/O) counts, lower cost, and better performance. In this study, the FO-WLP technology is applied to TSV-less inter-connection technology of 2.5D IC packaging and a novel RDL-first wafer level packaging is demonstrated. Firstly, a pre-coated laser release layer at the interface...
Handheld consumer electronics are requiring more complex packaging designs to accommodate higher component densities and reduce form factor. Fan-out wafer-level packaging (FOWLP) has garnered much attention lately as a cost-effective way to achieve high interconnect density and manage larger I/O counts within an affordable package. Two principal approaches to manufacturing FOWLP components have evolved:...
Over the past few years, temporary bonding has expanded together with the development of 3D stacked IC (SIC) technology. As maturity of the various processes has constantly improved, process yield and process impact on device performance have become key questions to answer. To further answer the refraining elements preventing a more massive technology adoption, in-line testing of the device throughout...
Over the past few years, temporary bonding has spread together with the development of 3D stacked IC (SIC) technology. Maturity of the various processes has constantly improved. Early processes enabled first demonstration of circuit thinning and thin wafer debonding. Each material generation has brought a step function in the technology maturity, which is now reaching a level allowing first 3D-SIC...
This paper describes a handling process for a thin glass panel, 200 mm × 200 mm × 130 (im, through double-side redistribution layer (RDL) formation to enable cost-effective fabrication of through-glass-via (TGV) interposers. The integration scheme includes lamination of a low-temperature bonding material utilizing a lamination process temperature of less than 100°C to bond a thin (130-μm) glass panel...
Interposer fabrication processes are applied in three-dimensional (3-D) integrated circuit (IC) integration to shorten the interconnection among different stacked chips and substrates. Because Si is a common material in semiconductor technology, Si interposers have been widely studied in many research activities. Compared with a Si wafer, glass substrates have the advantages of high resistivity, low...
One of the key aspects in 3D technology today is the bonding/debonding of a device wafer to a carrier wafer to enable wafer thinning and subsequent backside processing before 3D assembly. Not only must the ability of the bonding material to be very uniform in thickness across the wafer after bonding be considered, but also the ease of debonding from the carrier wafer. For the latter, a room temperature...
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