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With the continued scaling of semiconductor devices, controlling contact resistance becomes more and more challenging. Selenium (Se) ion implantation is noted in the literatures to effectively reduce contact resistance in NMOS transistors by lowering the electron Schottky barrier height (SBH). A suitable selenium source feed material is required and can be in solid form, such as selenium oxide (e...
Beamline implant productivity challenges associated with high dose p-type boron doping have been well documented. Recently, BF3/H2 mixtures were shown to be an effective alternative to BF3 in enabling implant tool productivity improvements through the extension of ion source life - which is accomplished with hydrogen's ability to interrupt the halogen cycle that otherwise is responsible for depositing...
Co-implantation of impurities such as carbon (C) has been proven to effectively reduce Transient Enhanced Diffusion (TED) of boron during annealing, enabling the formation of high-quality ultra-shallow junctions - a requirement for advanced-node semiconductor devices. Carbon dioxide (CO2) is traditionally used as the feed gas in implant tools for carbon implantation. Recently, carbon monoxide (CO)...
In recent years, a major challenge facing beamline implant tools is the low productivity of high dose p-type boron doping. A significant aspect of this challenge is the limited ion source life obtained when running boron trifluoride (BF3), the primary feed gas for boron doping. Use of BF3 often results in redistribution of tungsten within the arc chamber and source area due to the halogen cycle. Presented...
Ion implantation is known for its precise control and reproducibility of doping, enabling it to become one of the main approaches for high-efficiency cell manufacturing in the solar industry. Among the dopant materials, boron doping often represents the largest challenge to productivity as the efficiency of the traditional doping material, boron trifluoride (BF3), is always low. This paper presents...
Ion implantation of germanium in silicon wafers is often troubled by reduced ion source life due to use of germanium tetrafluoride (GeF4) as a source material. The problem is mainly due to tungsten re-deposition, a result of a fluorine-induced halogen cycle initiated within the ion source. The halogen cycle is particularly pronounced in the case of GeF4 by easy fragmentation of the molecule, as well...
Silicon Tetrafluoride (SiF4) is a dopant gas of choice for different silicon ion implantation processes used in semiconductor device engineering. It is a primary source of atomic dopants like Si and F, and a potential source of molecular dopants (e.g. Si2, SiFx, x=1–3). A significant challenge associated with the use of SiF4 is that it can compromise ion source performance, resulting in poor beam...
The preferential blocking of the interior adsorption sites of single walled carbon nanotubes (SWNTs) by n-nonane is demonstrated. Following adsorption of n-nonane and evacuation for 24h at 323K, it was found that interior sites with diameters less than ∼14Å remained filled with n-nonane, blocking the physical adsorption of N 2 on these sites at 77.3K. We demonstrate that “nonane blocking”...
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