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A method is presented to derive the state equations of the free vibration of piezoelectric materials under cylindrical coordinates in Hamiltonian system. Based on the 3D theory of piezoelectricity, the constitutive relations and the Lagrangian function of the generalized strain energy are rewritten in terms of the generalized displacements, i.e., displacements and electric potential and their derivatives...
Physics-of-failure (POF) prognostic model is a key technique of prognostics and health management (PHM) which plays critical roles for remaining life assessment of the products. The recent developments in POF based stress-damage model on thermal fatigue and vibration fatigue of solder joints were summarized. Numerous fatigue stress-damage models were proposed such as stress-fatigue model, strain-fatigue...
LSA was first introduced into mainstream semiconductor manufacturing for logic IC's at the 65 nm node, continuing the natural evolution of semiconductor thermal processing to higher temperatures (>1200??C) and shorter times (100's of microseconds). The initial application was a simple one-step LSA to assist spike-RTA in dopant activation of the source/drain and polysilicon gate regions. Since then,...
Ultra shallow junctions are increasingly important to overcome short channel effects, and sub-millisecond annealing offers the ability to control diffusion while simultaneously offering high activation levels. The ultra-fast annealing process needs tight uniformity control to provide consistent device performance across the wafer. The ultratech LSA-100A system features scan pattern overlap flexibility...
The performance improvement associated with the intentional manipulation of stresses on the transistor scale is an integral part of device fabrication at advanced technology nodes. However, comparatively little attention is given to stress management at within-die and within-wafer length scales. This paper describes the use of a stress measurement technology, the Coherent Gradient Sensing (CGS) interferometer,...
The use of strained SiGe is essential to improvement in device performance. However, the structure is susceptible to strain relaxation and wafer deformation during thermal annealing. The accumulation of stress in the wafer needs to be controlled to minimize photolithographic overlay errors. Laser spike annealing offers negligible pattern effects, closed-loop temperature control, and localized heating,...
Laser spike annealing (LSA) is a disruptive technology which has been successfully demonstrated for advanced junction engineering—creating highly activated ultra-shallow junctions with near diffusion-less boundaries. These produce higher performing devices with improved drive currents and/or lower leakage currents, and provide design engineers more opportunities for product enhancements. LSA has become...
The understanding and control of mechanical stresses accumulated during device fabrication is becoming more critical at advanced technology nodes. For example, e-SiGe is being used more and more extensively to strain the channel and improve PMOS performance. However, increases in Ge concentration result in increased susceptibility to strain relaxation and severe wafer deformation during advanced thermal...
Strain engineering has become a workhorse in increasing charge carrier mobility to boost performance for sub-45nm CMOS logic technologies. While pFET transistors with embedded Si1−xGex layers in the S/D region have been widely employed to induce compressive strain in the silicon channel, nFET transistors have mostly depended on either tensile liners or stress memorization techniques (SMT) to introduce...
The present study was conducted to evaluate the characteristics of electroacupuncture (EA)-induced analgesia in mice. Three inbred strains of mice (DBA/2, C57BL/6J, BALB/c) and three outbred strains (ICR, LACA, NIH) were used in the experiment. Two pairs of metallic needles were inserted into acupoints ST 36 and SP 6 connected to an electric pulse generator. EA parameters were set as constant current...
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