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The investigation of trace elemental contaminations in silicon material is of major interest as it has detrimental impacts for further process steps. Thus, the detection of surface impurities in silicon samples was investigated by sequential etching steps followed by ICP-MS measurements. Due to variations of etching solutions containing HCl, HF and HNO3 trace element contents could be assigned to...
In view of the increasing importance of wafer surface purity for the manufacturing of high efficiency cells we present here a sensitive method for the quantitative determination of wafer surface contaminations. Our results show that the detection limits are sufficient for process control in solar cell manufacturing. Particularly, the analysis and recovery of Cu is regarded, which may – besides Fe...
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