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The application of local aluminum (Al)-alloyed contacts to the p-type base of silicon solar cells reduces minority charge carrier recombination due to the formation of a local back surface field (LBSF). We study the recombination properties and formation of base contacts, which are realized by local laser ablation of a dielectric stack (laser contact opening - LCO) and subsequent full area screen...
Locally aluminum-doped p-type silicon regions are formed by in-line high-rate evaporation of aluminum. We deposit aluminum layers of 28μm thickness at dynamic deposition rates of 20μm×m/min on locally laser-ablated Al 2 O 3 / SiN x passivation layers. Due to the high substrate temperature of up to 778°C during deposition an Al-doped p + region is formed. Using the camera-based...
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