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An input/output characteristics of the inverter composed of the DNA/Si-MOSFET and the parasitic capacity was studied. The DNA was bridged between the Si electrodes those serve as the source and drain with the 120nm-gap-length. At VDD=0V and VDD=3V, the output characteristic was almost the same. The reason of this phenomenon is that the space charge layer of the DNA/Si-MOSFET changes due to the charge...
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