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Mg1−xZnxO thin films were deposited under different pressures during the growth process, which is modulated by different Ar/O2 flow ratio. When growth pressure increases, the growth orientation of MgZnO thin film changed from (200) to (111) because of the decrease in migration energy of reactive Mg, Zn and O atoms from MgZnO target material. The band gap of MgZnO thin films decreased when growth pressure...
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