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In the past few years, various 3D NAND Flash memories have been demonstrated, from device feasibility to chip implementation, to overcome scaling challenges in conventional planar NAND Flash [1-3]. The difficulties include shrinking the NAND cell and increasing manufacturing costs due to quadruple patterning and extreme ultraviolet lithography, motivating the development of the next-generation node...
Adaptive multi-pulse program scheme is proposed and evaluated in 21nm 3-bit/cell NAND flash devices. This scheme will be a promising solution to overcome performance degradation of program time accompanied with process technology scaling.
The market growth of mobile applications such as smart phones and tablet computers has fueled the explosive demand of NAND Flash memories having high density and fast throughput. To meet such a demand, we present a 64Gb multilevel cell (MLC) NAND Flash memory having 533Mb/s DDR interface in sub-20nm technology. Large floating-gate (FG) coupling interference and program disturbance are major challenges...
In this work, a SPICE-friendly hot carrier injection (HCI) model for NAND flash memory has been proposed. By applying the HCI model to the 32 nm NAND product, the simulation based on HCI model showed good agreement with the measurement results. Based on the proposed model, a complex problem regarding the program disturbance in the scaled NAND flash memory array can be predicted through simple circuit...
A highly manufacturable 32Gb multi-level NAND flash memory with 0.0098 μm2 cell size using 40nm TANOS cell technologies has been successfully developed for the first time. The main key technologies of 40nm 32Gb NAND flash are advanced high N.A immersion photolithography with off-axis illumination system, advanced blocking oxide of the TANOS cell, and PVD tungsten and flowable oxide for bit line
This paper presents a technique called "workload decomposition" in which the CPU workload is decomposed in two parts: on-chip and off-chip. The on-chip workload signifies the CPU clock cycles that are required to execute instructions in the CPU whereas the off-chip workload captures the number of external memory access clock cycles that are required to perform external memory transactions...
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